Molecular beam epitaxy growth and characterizations of AlGaAsSb/AlAsSb Bragg reflectors on InP
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چکیده
The molecular beam epitaxy growth of AlAsSb/Al 0.04 Ga 0.96 AsSb distributed Bragg reflectors lattice-matched to InP is studied. The fabrication and characterization of two such reflectors are reported. Fine structural and optical properties of these samples are investigated using double crystal X-ray diffraction, scanning electron microscopy and reflectivity measurements. Main device performances are a 260 nm wide stop-band centred at 1.55 lm with a maximum reflectivity of 90% for the first 8.5 pairs Bragg reflector while the second 15.5 pairs reflector have allowed an improved maximum reflectivity exceeding 96% at 1.6 lm with a stop-band of 220 nm. As a major result, a new type of surface defects is observed on the AlGaAsSb/AlAsSb Bragg reflector surface. Planar and cross-sectional microscopic observation has revealed that defects are initiated from the reflector—substrate interface. The formation of these defects are discussed and it has been related to InAs islands that appear during the in situ InP-substrate oxide desorption procedure. PACS: 61.72.Nn; 78.66.Fd; 81.05.Ea; 81.15.Hi
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تاریخ انتشار 1997